STTH312 데이터 시트보기 (PDF) - STMicroelectronics
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STTH312 Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
STTH312
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
1200
V
IF(RMS) RMS forward current
6
A
IF(AV) Average forward current, δ = 0.5
Tc = 150° C
3
A
IFRM Repetitive peak forward current
tp = 5 µs, F = 5 kHz square
35
A
IFSM Surge non repetitive forward current
tp = 10 ms Sinusoidal
35
A
Tstg Storage temperature range
-65 to + 175 °C
Tj
Maximum operating junction temperature
175
°C
Table 2. Thermal parameter
Symbol
Parameter
Rth(j-c)
Junction to case
Value
3.8
Unit
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
10
µA
2
100
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
IF = 3 A
2
1.20 1.7
V
Tj = 150° C
1.15 1.65
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation: P = 1.4 x IF(AV) + 0.1 IF2(RMS)
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