STPS10150 데이터 시트보기 (PDF) - STMicroelectronics
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STPS10150 Datasheet PDF : 9 Pages
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Characteristics
STPS10150C
Figure 9.
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
IR(µA)
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
0
25
Tj=175°C
Tj=150°C
Tj=125°C
Tj=75°C
Tj=25°C
VR(V)
50
75 100 125 150
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C(pF)
1000
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
100
10 1
VR(V)
10
100
1000
Figure 11. Forward voltage drop versus
forward current (per diode)
100 IFM(A)
10
Tj=125 °C
(Maximum values)
Tj=125 °C
(Typical values)
1
Tj=25 °C
(Maximum values)
VFM(V)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure 12.
Thermal resistance, junction to
ambient, versus copper surface
under tab - Epoxy printed circuit
board, ecu 35 µm (D2PAK only)
80 Rth(j-a) (°C/W)
70
D²PAK
60
50
40
30
20
10
SCU(cm²)
0
0 5 10 15 20 25 30 35 40
Figure 13.
Thermal resistance, junction to
ambient, versus copper surface
under tab - Epoxy printed circuit
board, ecu 35 µm (TO220FPAB only)
Rth(j-a) (°C/W)
100
90
80
70
60
50
40
30
20
10
0
0 5 10
SCU(cm²)
15 20 25
TO220FPAB
30 35 40
4/9
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