STPS10150 데이터 시트보기 (PDF) - STMicroelectronics

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STPS10150

High voltage power Schottky rectifier

STMicroelectronics 

STPS10150C

Characteristics

Figure 3. Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

PARM(tp)

PARM(1µs)

1

0.1

0.01

0.001

0.01

0.1

tp(µs)

1

10

100

1000

PARM(tp)

1.2 PARM(25°C)

1

0.8

0.6

0.4

0.2

0

25

50

Tj(°C)

75

100

125

150

Figure 5.

Non repetitive surge peak

forward current versus overload

duration - maximum values, per

diode (TO-220AB, D2PAK)

IM(A)

80

70

60

50

40

30

20

IM

10

t

δ=0.5

0

1E-3

t(s)

1E-2

1E-1

Tc=50°C

Tc=75°C

Tc=125°C

1E+0

Figure 6.

70 IM(A)

60

50

40

30

20

10

IM

0

1.E-3

Non repetitive surge peak forward

current versus overload duration

- maximum values, per diode

(TO-220FPAB)

TC=50 °C

t

t(s)

d =0.5

1.E-2

1.E-1

TC=75 °C

TC=125 °C

1.E+0

Figure 7.

Relative variation of thermal

Figure 8.

impedance junction to case versus

pulse duration (TO-220AB, D2PAK)

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

Zth(j-c)/Rth(j-c)

1.0

Single pulse

TO-220AB

D²PAK

Zth(j-c)/Rth(j-c)

1.0

Single pulse

TO-220FPAB

0.1

0.1

1.E-3

tp(s)

1.E-2

1.E-1

1.E+0

0.0

1.E-3

1.E-2

tp(s)

1.E-1

1.E+0 1.E+1

3/9

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