STPS10150 데이터 시트보기 (PDF) - STMicroelectronics
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STPS10150 Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STPS10150C
Table 2. Thermal resistance
Symbol
Parameter
TO-220AB, D2PAK
Rth(j-c) Junction to case
TO-220FPAB
TO-220AB, D2PAK
Rth(c) Coupling
TO-220FPAB
TO-220AB, D2PAK
TO-220FPAB
Per diode
Total
Value
4
7
2.4
5.3
0.7
3.7
Unit
° C/W
When the diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P(diode 1) x Rth(j-l)(Per diode) + P(diode 2) x Rth(c)
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ Max.
Unit
IR (1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
2.0
µA
0.40 2.0
mA
VF (2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
IF = 5 A
IF = 10 A
0.92
0.69 0.75
V
1
0.79 0.85
1. tp = 5 ms, δ < 2%
2. tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.02 IF2(RMS)
Figure 1.
Average forward power
dissipation versus average
forward current (per diode)
Figure 2.
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
PF(av)(W)
5.0
4.5
δ = 0.1 δ = 0.2 δ = 0.5
4.0
δ = 0.05
3.5
δ=1
3.0
2.5
2.0
1.5
T
1.0
0.5
IF(av) (A)
δ=tp/T
tp
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IF(av)(A)
6.0
5.0
Rth(j-a)=Rth(j-c)
TO-220FPAB TO-220AB/D²PAK
4.0
3.0
2.0
T
1.0
d=tp/T
tp
0.0
0
25 50
Rth(j-a)=15 °C/W
Tamb(°C)
75 100 125 150 175
2/9
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