STB19NM65N 데이터 시트보기 (PDF) - STMicroelectronics

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STB19NM65N

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD =325 V, ID = 7.75 A

RG = 4.7 Ω VGS = 10 V

(see Figure 18)

Min Typ Max Unit

25

ns

8

ns

80

ns

26

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 15.5 A, VGS = 0

ISD = 15.5 A,

di/dt = 100 A/µs

VDD = 100 V, Tj = 25 °C

(see Figure 20)

ISD = 15.5 A,

di/dt = 100 A/µs

VDD = 100 V, Tj = 150°C

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min Typ Max Unit

15.5 A

62 A

1.3 V

460

ns

6

µC

27

A

600

ns

8

µC

27

A

6/19

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