STB19NM65N 데이터 시트보기 (PDF) - STMicroelectronics

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STB19NM65N

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET

STMicroelectronics 

STF19NM65N-STI19NM65N-STW19NM65N

STB19NM65N - STP19NM65N

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247

second generation MDmesh™ Power MOSFET

Features

Type

STB19NM65N

STF19NM65N

STI19NM65N

STP19NM65N

STW19NM65N

VDSS

(@Tjmax)

710 V

710 V

710 V

710 V

710 V

RDS(on) max

ID

< 0.27 Ω

< 0.27 Ω

< 0.27 Ω

< 0.27 Ω

< 0.27 Ω

15.5 A

15.5 A(1)

15.5 A

15.5 A

15.5 A

1. Limited only by maximum temperature allowed

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Description

This series of devices implements the second

generation of MDmesh™ Technology. This

revolutionary Power MOSFET associates a new

vertical structure to the Company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters

3

2

1

TO-220

3

2

1

TO-220FP

3

1

D²PAK

123

I²PAK

3

2

1

TO-247

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes

STI19NM65N

STF19NM65N

STP19NM65N

STB19NM65NT4

STW19NM65N

Marking

19NM65N

19NM65N

19NM65N

19NM65N

19NM65N

Package

I²PAK

TO-220FP

TO-220

D²PAK

TO-247

Packaging

Tube

Tube

Tube

Tape and reel

Tube

February 2008

Rev 1

1/19

www.st.com

19

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