STB19NM65N 데이터 시트보기 (PDF) - STMicroelectronics

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STB19NM65N

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET

STMicroelectronics 

STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N

2

Electrical characteristics

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Drain-source

V(BR)DSS breakdown voltage

dv/dt (1) Drain source voltage slope

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

ID = 1 mA, VGS = 0

650

VDD= 520 V, ID=15.5 A,

VGS=10 V

VDS = Max rating

VDS = Max rating, @125 °C

VGS = ± 20 V

VDS = VGS, ID = 250 µA

2

VGS = 10 V, ID = 7.75 A

V

30

V/ns

1 µA

100 µA

±100 nA

3

4

V

0.25 0.27 Ω

1. Characteristics value at turn off on inductive load

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS=15 V, ID =7.75 A

VDS = 50 V, f = 1 MHz,

VGS = 0

15

S

1900

pF

110

pF

10

pF

Coss

(2)

eq.

Equivalent output

capacitance

VGS = 0 ,

VDS = 0 to 520 V

230

pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 520 V, ID = 15.5 A,

VGS = 10 V,

(see Figure 19)

55

nC

9

nC

30

nC

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

5/19

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