STB80NE03L-06 데이터 시트보기 (PDF) - STMicroelectronics

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STB80NE03L-06

N-channel 30V - 0.005Ω - 85A - D2PAK STripFET™ Power MOSFET

STMicroelectronics 

STB80NE03L-06

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min Typ. Max Unit

ISD

ISDM(1)

VSD(2)

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80A, VGS = 0

ISD = 80 A,

di/dt = 100A/µs, VDD = 15

V, TJ = 150°C

Figure 15.

80 A

320 A

1.5 V

75

ns

0.14

nC

4

A

1. Pulse with limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

5/13

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