STB80NE03L-06 데이터 시트보기 (PDF) - STMicroelectronics
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STB80NE03L-06 Datasheet PDF : 13 Pages
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STB80NE03L-06
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM (1)
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Derating factor
PTOT
dv/dt (2)
Total dissipation at TC = 25°C
Peak diode recovery voltage slope
TJ
Operating junction temperature
Tstg Storage temperture
1. Pulse width limited by safe operating area
2. ISD < 20A, di/dt < 100A/µs, VDD = 80% V(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
RthJC
RthJA
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Electrical ratings
Value
30
30
± 20
80
60
320
1
150
7
-55 to 175
Unit
V
V
V
A
A
A
W
V/ns
°C
Value
1
62.5
300
Unit
°C/W
°C/W
°C
Max Value
Unit
80
A
600
mJ
3/13
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