STB80NE03L-06 데이터 시트보기 (PDF) - STMicroelectronics

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STB80NE03L-06

N-channel 30V - 0.005Ω - 85A - D2PAK STripFET™ Power MOSFET

STMicroelectronics 

STB80NE03L-06

N-channel 30V - 0.005Ω - 85A - D2PAK

STripFET™ Power MOSFET

General features

Type

VDSS

RDS(on)

ID

STB80NE03L-06 30V

<0.006Ω 80A

■ Exceptional dv/dt capability

■ Low gate charge 100°C

■ 100% Avalanche tested

Description

This Power MOSFET is the latest development of

STMicroelectronics unique “Single Feature

Size™” strip-based process. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalanche

characteristics and less critical alignment steps

therefore a remarkable manufacturing

reproducibility.

3

1

D2PAK

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

STB80NE03L-06

Marking

B80NE03L

Package

D²PAK

Packaging

Tape & reel

July 2006

Rev 6

1/13

www.st.com

13

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