RN4910 데이터 시트보기 (PDF) - Toshiba

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RN4910

TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

Toshiba 

RN4910

Q1 Electrical Characteristics (Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test

Circuit

Test Condition

Min Typ. Max Unit

ICBO

― VCB = −50V, IE = 0A

―

― −100 nA

IEBO

― VEB = −5V, IC = 0A

―

― −100 nA

hFE

― VCE = −5V, IC = −1mA

120

― 400

―

VCE (sat)

― IC = −5mA, IB = −0.25mA

― −0.1 −0.3

V

fT

― VCE = −10V, IC = −5mA

― 200

― MHz

Cob

― VCB = −10V, IE = 0A, f = 1MHz ―

3

6

pF

Q2 Electrical Characteristics (Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

IEBO

hFE

VCE (sat)

fT

Cob

Test

Circuit

Test Condition

― VCB = 50V, IE = 0A

― VEB = 5V, IC = 0A

― VCE = 5V, IC = 1mA

― IC = 5mA, IB = 0.25mA

― VCE = 10V, IC = 5mA

― VCB = 10V, IE = 0A, f = 1 MHz

Min Typ. Max Unit

―

― 100 nA

―

― 100 nA

120

― 700

―

―

0.1

0.3

V

― 250

― MHz

―

3

6

pF

Q1, Q2 Common Electrical Characteristics (Ta = 25°C)

Characteristic

Input resistor

Symbol

R1

Test

Circuit

―

Test Condition

―

Min Typ. Max Unit

3.29 4.7 6.11 kΩ

© 2018

3

Toshiba Electronic Devices & Storage Corporation

2018-12-21

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