RN4910 데이터 시트보기 (PDF) - Toshiba
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RN4910 Datasheet PDF : 6 Pages
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RN4910
TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN4910
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 4.7kΩ
(Q1, Q2 Common)
Q1 Absolute Maximum Ratings (Ta = 25C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
−50
V
−50
V
−5
V
−100
mA
Q2 Absolute Maximum Ratings (Ta = 25C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
50
V
50
V
5
V
100
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 6.8mg (typ.)
© 2018
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1990-10
2018-12-21
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