RN4910 데이터 시트보기 (PDF) - Toshiba

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RN4910

TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

Toshiba 

Q1, Q2 Common Absolute Maximum Ratings (Ta = 25C)

RN4910

Characteristic

Symbol

Rating

Unit

Collector power dissipation

Junction temperature

Storage temperature range

PC *

Tj

Tstg

200

mW

150

C

−55 to 150

C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

* Total rating

Marking

Equivalent Circuit (Top View)

© 2018

2

Toshiba Electronic Devices & Storage Corporation

2018-12-21

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