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RC5057

High Performance Programmable Synchronous DC-DC Controller for Low Voltage Microprocessors

Fairchild Semiconductor 

PRODUCT SPECIFICATION

RC5057

Table 2. RC5057 Application Bill of Materials

(Components based on Worst Case Analysis—See Appendix for Details)

Reference

C1

C2, C5

C3-4,6

CIN

COUT

D1

L1

Manufacturer Part #

AVX

TAJB475M010R5

Panasonic

ECU-V1C105ZFX

Panasonic

ECU-V1H104ZFX

Sanyo

10MV1200GX

Sanyo

6MV1500GX

Motorola

MBRD835L

Any

Quantity

1

2

3

*

*

1

Optional

L2

Any

1

Q1

Fairchild

1

FDP6030L or

FDB6030L

Q2

Fairchild

1

FDP7030BL or

FDB7030BL

R1

Any

1

R2-3

Any

2

R4

Any

1

R5

Any

1

R6

Any

1

U1

Fairchild

1

RC5057M

*See Appendix.

Description

4.7µF, 10V Capacitor

Requirements/Comments

1µF, 16V Capacitor

100nF, 50V Capacitor

1200µF, 10V Electrolytic IRMS = 2A

1500µF, 6.3V Electrolytic ESR ≤44mΩ

8A Schottky Diode

2.5µH, 10A Inductor

1.3µH, 20A Inductor

N-Channel MOSFET

(TO-220 or TO-263)

DCR ~ 6mΩ

See Note 1.

DCR ~ 2mΩ

RDS(ON) = 20mΩ @ VGS = 4.5V

See Note 2.

N-Channel MOSFET

(TO-220 or TO-263)

RDS(ON) = 10mΩ @ VGS = 4.5V

See Note 2.

33Ω

4.7Ω

10KΩ

*

10Ω

DC/DC Controller

Notes:

1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply

with Intel dI/dt requirements. L1 may be omitted if desired.

2. For designs using the TO-220 MOSFETs, heatsinks with thermal resistance ΘSA < 20°C/W should be used. For designs using

the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections, refer

to Applications Bulletin AB-8.

REV. 1.2.0 2/10/00

9

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