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RC5057

High Performance Programmable Synchronous DC-DC Controller for Low Voltage Microprocessors

Fairchild Semiconductor 

PRODUCT SPECIFICATION

RC5057

Table 3. RC5057 Application Bill of Materials for Coppermine/Camino Processors

(Components based on Worst Case Analysis—See Appendix for Details)

Reference

C1

C2, C5

C3-4,6

CIN

COUT

D1

D2

L1

L2

Q1

Q2

R1

R2-3

R4

R5

R6

R7

R8

R9

R10

U1

Manufacturer Part #

AVX

TAJB475M010R5

Panasonic

ECU-V1C105ZFX

Panasonic

ECU-V1H104ZFX

Sanyo

10MV1200GX

Sanyo

6MV1500GX

Motorola

MBRD835L

Fairchild

1N4148

Any

Any

Fairchild

FDP6030L or FDB6030L

Fairchild

FDP7030BL or

FDB7030BL

Any

Any

Any

Any

Any

N/A

Any

Any

Dale

WSL-2512-.01Ω

Fairchild

RC5057M

Quantity

1

2

3

3

10

1

1

Optional

1

1

1

1

2

1

1

1

1

1

1

1

1

Description

4.7µF, 10V Capacitor

Requirements/Comments

1µF, 16V Capacitor

100nF, 50V Capacitor

1200µF, 10V

Electrolytic

1500µF, 6.3V

Electrolytic

8A Schottky Diode

IRMS = 2A

ESR ≤ 44mΩ

Signal Diode

2.5µH, 10A Inductor

1.3µH, 20A Inductor

N-Channel MOSFET

(TO-220 or TO-263)

N-Channel MOSFET

(TO-220 or TO-263)

DCR ~ 6mΩ See Note 1.

DCR ~ 2mΩ

RDS(ON) = 20mΩ @ VGS = 4.5V

See Note 2.

RDS(ON) = 10mΩ @ VGS = 4.5V

See Note 2.

33Ω

4.7Ω

10KΩ

2.80KΩ

10Ω

1.8mΩ

2.1Ω

1KΩ

10mΩ, 1W Resistor

PCB Trace Resistor

DC/DC Controller

Notes:

1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply

with Intel dI/dt requirements. L1 may be omitted if desired.

2. For designs using the TO-220 MOSFETs, heatsinks with thermal resistance ΘSA < 20°C/W should be used. For designs using

the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections, refer

to Applications Bulletin AB-8.

REV. 1.2.0 2/10/00

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