R6020ANZ 데이터 시트보기 (PDF) - ROHM Semiconductor
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R6020ANZ Datasheet PDF : 6 Pages
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R6020ANZ
Data Sheet
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
100
VGS= 0V
Pulsed
10
Ta=125℃
1
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.1
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
10000
1000
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Ciss
100
Crss
Coss
10
Ta= 25°C
f= 1MHz
VGS= 0V
1
0.01 0.1
1
10 100 1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.12 Dynamic Input Characteristics
10
5
Ta= 25°C
VDD= 300V
ID= 20A
RG= 10Ω
Pulsed
0
0 10 20 30 40 50 60 70
TOTAL GATE CHARGE : Qg (nC)
1000
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
100
10000
1000
100
Fig.14 Switching Characteristics
tf
td(off)
Ta= 25°C
VDD= 300V
VGS= 10V
RG= 10Ω
Pulsed
Ta= 25°C
di / dt= 100A / μs
VGS= 0V
Pulsed
10
0.1
1
10
100
REVERSE DRAIN CURRENT : IDR (A)
10
1
0.01
td(on)
tr
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10
Ta = 25°C
1 Single Pulse : 1Unit
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
Rth（ch-a） = 27.3 °C/W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
PULSE WIDTH : Pw(s)
100
1000
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4/5
2011.10 - Rev.A
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