R6020ANZ 데이터 시트보기 (PDF) - ROHM Semiconductor
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R6020ANZ Datasheet PDF : 6 Pages
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Data Sheet
10V Drive Nch MOSFET
R6020ANZ
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
Application
Switching
Dimensions (Unit : mm)
TO-3PF
15.5
φ3.6
5.5 3.0
2.0
0.75
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
5.45 5.45
2.0 3.0
0.9
Packaging specifications
Package
Bulk
Type Code
-
Basic ordering unit (pieces) 360
R6020ANZ
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
600
V
VGSS
30
V
ID *3
20
A
IDP *1
80
A
IS *3
20
A
ISP *1
80
A
IAS *2
10
A
EAS *2
26.7
mJ
PD *4
120
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
Thermal resistance
Parameter
Channel to Case
* TC=25°C
Symbol
Rth (ch-c) *
Limits
1.04
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
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1/5
2011.10 - Rev.A
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