R6020ANZ 데이터 시트보기 (PDF) - ROHM Semiconductor
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R6020ANZ Datasheet PDF : 6 Pages
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R6020ANZ
Electrical characteristic curves
Data Sheet
Fig.1 Maximum Safe Operating Aera
100
PW=100us
10
PW=1ms
PW = 10ms
1
Operation in this
area is limited
0.1
by RDS(ON)
Ta = 25°C
Single Pulse
0.01
0.1
1
10
100
1000
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.2: Typical output characteristics(Ⅰ)
40
VGS=10V
35
VGS=8.0V VGS=6.5V
30
VGS=7.0V VGS=6.0V
25
Ta= 25°C
20
Pulsed
VGS=5.5V
15
10
5
0
0
VGS=5.0V
VGS= 4.5V
10
20
30
40
50
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.3: Typical output characteristics(Ⅱ)
20
Ta= 25°C
VGS=10V
Pulsed
VGS=8.0V
15
VGS=7.0V
VGS=6.5V
10
VGS=6.0V
VGS=5.5V
VGS=5.0V
5
VGS= 4.5V
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.4 Typical Transfer Characteristics
100
VDS= 10V
Pulsed
10
Ta=125℃
Ta= 75℃
Ta= 25℃
1
Ta= -25℃
0.1
0.01
01234567
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
6
VDS= 10V
5 ID= 1mA
4
3
2
1
0
-50
0
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
10
VGS= 10V
Pulsed
1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.1
0.01
0.001
0.1
10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
0.5
Ta=25°C
Pulsed
0.4
0.3
ID=20A
0.2
ID=10A
0.1
0
0
5
10
15
GATE-SOURCE VOLTAGE : VGS (V)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
0.5
VGS= 10V
Pulsed
0.4
Fig.9 Forward Transfer Admittance
vs. Drain Current
100
VDS= 10V
Pulsed
10
0.3
ID= 20A
0.2
ID= 10A
0.1
0
-50
0
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
1
0.1
0.01
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.001
0.001 0.01 0.1
1
10 100
DRAIN CURRENT : ID (A)
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3/5
2011.10 - Rev.A
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