NCP693 데이터 시트보기 (PDF) - ON Semiconductor

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NCP693

1A CMOS Low-Dropout Voltage Regulator

ON Semiconductor 

NCP693

Vin

Vout

Vin

Vin

Vout

Vin

Vout

Vout

Vref

Current Limit &

CE

Thermal Shutdown

CE

GND

Vref

Current Limit &

Thermal Shutdown

GND

Version H (NCP693HMNxxTCG)

Version D (NCP693DMNxxTCG)

Figure 1. Internal Block Diagram

PIN FUNCTION DESCRIPTION

Pin No.

Pin Name

Description

1

Vout

Regulated output voltage.

2

Vout

Regulated output voltage.

3

GND

Power supply ground.

4

CE

This input is used to place the device into low−power standby. When this input is pulled low, the device

is disabled. If this function is not used, Enable should be connected to Vin.

5

Vin

Positive power supply input voltage.

6

Vin

Positive power supply input voltage.

EP

GND

Power supply ground.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Input Voltage

Vin

7

V

Enable Voltage

VCE

−0.3 to Vin

V

Output Voltage

Vout

−0.3 to Vin + 0.3

V

Operating Junction Temperature

TJ

+150

°C

Operating Ambient Temperature

TA

−40 to +85

°C

Storage Temperature

Tstg

−55 to +125

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. This device series contains ESD protection and exceeds the following tests:

Human Body Model 2000 V per (JEDEC 22−A114−B)

Machine Model Method 200 V

THERMAL CHARACTERISTICS

Rating

Symbol

Test Conditions

Typical Value

Unit

Junction−to−Ambient

PSIJ−Lead 2

RqJA

1 oz Copper Thickness, 100 mm2

114

YJ−L2

1 oz Copper Thickness, 100 mm2

25

°C/W

°C/W

Power Dissipation

PD

880

mW

NOTE: Single component mounted on an 80 x 80 x 1.5 mm FR4 PCB with stated copper head spreading area. Using the following

boundary conditions as stated in EIA/JESD 51−1, 2, 3, 7, 12.

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