NCP334 데이터 시트보기 (PDF) - ON Semiconductor

부품명

상세내역

일치하는 목록

NCP334

2A Ultra-Small Controlled Load Switch with Auto-Discharge Path

ON Semiconductor 

NCP334, NCP335

APPLICATION INFORMATION

Power Dissipation

Main contributor in term of junction temperature is the

power dissipation of the power MOSFET. Assuming this,

the power dissipation and the junction temperature in

normal mode can be calculated with the following

equations:

PD = RDS(on) x (IOUT)2

PD

= Power dissipation (W)

RDS(on)

= Power MOSFET on resistance (W)

IOUT

= Output current (A)

TJ = PD x RqJA + TA

TJ

RqJA

TA

= Junction temperature (°C

= Package thermal resistance (°C/W)

= Ambient temperature (°C)

PCB Recommendations

The NCP334 – NCP335 integrate an up to 2 A rated

PMOS FET, and the PCB design rules must be respected to

properly evacuate the heat out of the silicon. By increasing

PCB area, especially around IN and OUT pins, the RqJA of

the package can be decreased, allowing higher power

dissipation.

Figure 13. Routing Example 1 oz, 2 Layers, 1005C/W

http://onsemi.com

8

Share Link: