NCP334 데이터 시트보기 (PDF) - ON Semiconductor
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NCP334 Datasheet PDF : 10 Pages
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NCP334, NCP335
ELECTRICAL CHARACTERISTICS Min and Max Limits apply for TA between −40°C to +85°C for VIN between 1.2 V to 5.5 V
(Unless otherwise noted). Typical values are referenced to TA = + 25 °C and VIN = 4 V (Unless otherwise noted).
Symbol
Parameter
Conditions
Min Typ Max Unit
POWER SWITCH
Static drain−source
on−state resistance
RDS(on)
VIN = 5.5 V
VIN = 4.2 V
VIN = 3.3 V
VIN = 1.8 V
TA = 25°C, I = 200 mA (Note 8)
TA = 25°C, I = 200 mA
TA = 25°C, I = 200 mA
TA = 25°C, I = 200 mA
Full
38
40 mW
42
46
47
52
76
87
100
RDIS
TR
Output discharge path
Output rise time
VIN = 1.2 V
EN = low
VIN = 3.6 V
TA = 25°C, I = 200 mA
VIN = 3.3 V, NCP335 only
CLOAD = 1 mF, RLOAD = 25 W
(Note 7)
211 420
65 110 W
71
ms
TF
Output fall time
VIN = 3.6 V
CLOAD = 1 mF, RLOAD = 25 W
(Note 7)
42
ms
Ton
Gate turn on
Ten
Enable time
VIH
High−level input
voltage
VIN = 3.6 V
VIN = 3.6 V
Gate turn on + Output rise time
From EN low to high to
VOUT = 10% of fully on
116
ms
45
ms
0.9
V
VIL
Low−level input voltage
REN
Pull down resistor
QUIESCENT CURRENT
0.5
V
5
MW
VIN = 3.3 V,
EN = low, No load
IQ
Current consumption
VIN = 3.3 V,
EN= high, No load
1
mA
1
mA
7. Parameters are guaranteed for CLOAD and RLOAD connected to the OUT pin with respect to the ground
8. Guaranteed by design and characterization, not production tested.
TIMINGS
Vin
EN
Vout
TEN TR
TON
Figure 3. Enable, Rise and fall time
http://onsemi.com
4
TDIS
TF
TOFF
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