M5M29GB/T161BWG 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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M5M29GB/T161BWG
MITSUBISHI ELECTRIC
M5M29GB/T161BWG Datasheet PDF : 23 Pages
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MITSUBISHI LSIs
M5M29GB/T161BWG
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
SOFTWARE COMMAND DEFINITION
Command List
Command
Read Array
Device Identifier
Read Status Register
Clear Status Register
Clear Page Buffer
Word Program 5)
Page Program 7)
Single Data Load to Page Buffer 5)
Page Buffer to Flash 5)
Block Erase / Confirm
Suspend
Resume
Read Lock Bit Status
Lock Bit Program / Confirm
Erase All Unlocked Blocks
1st bus cycle
Mode
Data
Address (DQ15-0) 1)
2nd bus cycle
Mode
Data
Address (DQ15-0)
3rd ~129th bus cycles (M5M29GB/T161BWG)
Mode
Address
Data
(DQ15-0)
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
X
X
Bank3)
X
X
Bank(I) 5)
Bank
Bank(I) 5)
Bank(I) 5)
Bank
Bank
Bank
X
Bank
X
FFH
90H
70H
50H
55H
40H
41H
74H
0EH
20H
B0H
D0H
71H
77H
A7H
Read
Read
Write
Write
Write
Write
Write
Write
Read
Write
Write
IA 2)
Bank
ID 2)
SRD4)
X
WA 6)
WA0 7)
WA
WA 8)
BA 9)
D0H 1)
WD 6)
WD0 7)
WD
D0H 1)
D0H 1)
Write
BA
DQ6 10)
BA
D0H 1)
X
D0H 1)
WAn 7) WDn 7)
1) Upper byte data (DQ8-DQ15) is ignored.
2) IA=ID Code Address : A0=VIL (Manufacturer's Code) : A0=VIH (Device Code), ID=ID Code
3) Bank = Bank Address (Bank(I) or Bank(II)). A19-A17.
4) SRD = Status Register Data
5) Word Program, Single Data Load and Page Buffer to Flash Command is valid for only Bank(I).
6) WA = Write Address,WD = Write Data
7) WA0,WAn=Write Address, WD0,WDn=Write Data.
: Write Address and Write Data must be provided sequentially from 00H to 7FH for A6-A0. Page size is 128word (128word x 16bit).
and also A19-A7(Block Address, Page Address) must be valid.
8) WA = Write Address : Upper page address, A19-A7(Block Address, Page Address) must be valid.
9) BA = Block Address : Bank1: A19-A14
Bank2: A19-A15
10) DQ6 provides Block Lock Status, DQ6 = 1 : Block Unlock, DQ6 = 0 : Block Locked.
8
Sep.1999. Rev4.0
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