M5M29GB/T161BWG 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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M5M29GB/T161BWG
MITSUBISHI ELECTRIC
M5M29GB/T161BWG Datasheet PDF : 23 Pages
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MITSUBISHI LSIs
M5M29GB/T161BWG
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
DEVICE IDENTIFIER CODE
Code
Pins
A0
DQ7
DQ6
DQ5 DQ4
DQ3
DQ2
DQ1
DQ0 Hex. Data
Manufacturer Code
Device Code (-T161BWG)
Device Code (-B161BWG)
The upper data(D15-8) is "0".
VIL
0
0
0
1
1
1
0
0
1CH
VIH
1
0
1
0
0
0
0
0
A0H
VIH
1
0
1
0
0
0
0
1
A1H
ABSOLUTE MAXIMUM RATINGS
Symbol
Vcc
VI1
Ta
Tbs
Tstg
I OUT
Parameter
Vcc voltage
All input or output voltage except Vcc,A9,RP# 1)
Ambient temperature
Temperature under bias
Storage temperature
Output short circuit current
Conditions
With respect to Ground
Min Max Unit
-0.2 4.6
V
-0.6 4.6
V
-40
85
°C
-50
95
°C
-65 125
°C
100
mA
1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage
on input/output pins is VCC+0.5V which, during transitions, may overshoot to VCC+1.5V for periods <20ns.
CAPACITANCE
Symbol
Parameter
CIN
COUT
Input capacitance (Address, Control Pins)
Output capacitance
Test conditions
Limits
Min Typ Max
Unit
Ta = 25°C, f = 1MHz, Vin = Vout = 0V
8
pF
12
pF
DC ELECTRICAL CHARACTERISTICS (Ta = -40~ 85°C, Vcc = 2.7V ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Min Typ1) Max
Unit
ILI
Input leakage current
ILO
Output leakage current
ISB1
0V≤VIN≤VCC
0V≤VOUT≤VCC
VCC = 3.6V, VIN=VIL/VIH, CE# = RP# =WP# = VIH
±1.0
µA
±10
µA
50 200
µA
VCC standby current
ISB2
VCC = 3.6V, VIN=GND or VCC,
CE# = RP# = WP# = VCC±0.3V
0.1
5
µA
ISB3
VCC deep powerdown current
ISB4
VCC = 3.6V, VIN=VIL/VIH, RP# = VIL
VCC = 3.6V, VIN=GND or VCC, RP# =GND±0.3V
VCC = 3.6V, VIN=VIL/VIH, CE# = VIL,
5MHz
ICC1
VCC read current for Word or Byte RP#=OE#=VIH, IOUT = 0mA
1MHz
5
15
µA
0.1
5
µA
8
15
2
4
mA
ICC2
VCC Write current for Word or Byte
VCC = 3.6V,VIN=VIL/VIH, CE# =WE#= VIL,
RP#=OE#=VIH
15
mA
ICC3
VCC program current
VCC = 3.6V, VIN=VIL/VIH, CE# = RP# =WP# = VIH
35
mA
ICC4
VCC erase current
VCC = 3.6V, VIN=VIL/VIH, CE# = RP# =WP# = VIH
35
mA
ICC5
VCC suspend current
VIL
Input low voltage
VIH
Input high voltage
VCC = 3.6V, VIN=VIL/VIH, CE# = RP# =WP# = VIH
– 0.5
2.0
200
µA
0.8
V
Vcc+0.5
V
VOL
Output low voltage
IOL = 4.0mA
0.45
V
VOH1
VOH2
Output high voltage
IOH = –2.0mA
IOH = –100µA
0.85Vcc
V
Vcc–0.4
V
VLKO
Low VCC Lock-Out voltage 2)
1.5
2.2
V
All currents are in RMS unless otherwise noted.
1) Typical values at Vcc=3.3V, Ta=25°C
2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than VLKO.
If Vcc is less than VLKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than VLKO, the alteration of memory contents
may occur.
10
Sep.1999. Rev4.0
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