M38504M6-200FP 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC

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M38504M6-200FP

SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

MITSUBISHI ELECTRIC  

MITSUBISHI MICROCOMPUTERS

3850 Group (Spec. H)

SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

FLASH MEMORY VERSION

Summary

Table 9 shows the summary of the M38507F8 (flash memory version).

Table 9 Summary of M38507F8 (flash memory version)

Item

Power source voltage

Vcc = 2.7–5.5 V (Note 1)

Vcc = 2.7–3.6 V (Note 2)

Specification

Program/Erase VPP voltage

4.5–5.5 V, f(XIN) = 8 MHz

Flash memory mode

3 modes (Parallel I/O mode, Standard serial I/O mode, CPU rewrite mode)

Erase block division

User ROM area

Boot ROM area

1 block (32 Kbytes)

1 block (4 Kbytes) (Note 3)

Program method

Byte program

Erase method

Batch erasing

Program/Erase control method

Program/Erase control by software command

Number of commands

6 commands

Number of program/Erase times

100 times

ROM code protection

Available in parallel I/O mode, and standard serial I/O mode

Notes 1: The power source voltage must be Vcc = 4.5–5.5 V at program and erase operation.

2: The power source voltage can be Vcc = 3.0–3.6 V also at program and erase operation.

3: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory.

This Boot ROM area can be rewritten in only parallel I/O mode.

38

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