EBS52UC8APSA-75 데이터 시트보기 (PDF) - Elpida Memory, Inc
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EBS52UC8APSA-75 Datasheet PDF : 14 Pages
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EBS52UC8APSA
DC Characteristics 1 (TA = 0 to +70°C, VDD = 3.3V ± 0.3V, VSS = 0V)
Parameter
Symbol
Grade max.
Unit
Test condition
Notes
Operating current
ICC1
ICC1
-7A/7AL 1280
-75/75L 1120
mA
Burst length = 1
tRC = tRC (min.)
mA
1, 2, 3
Standby current in power down ICC2P
48
mA
CKE = VIL, tCK = 12ns
6
Standby current in non power
down
Active standby current in power
down
Active standby current in non
power down
Burst operating current
ICC2N
ICC3P
ICC3N
ICC4
320
64
480
1320
mA
CKE, /CS = VIH,
tCK = 12ns
4
mA
CKE = VIL, tCK = 12ns
1, 2, 6
mA
CKE, /CS = VIH,
tCK = 12ns
1, 2, 4
mA
tCK = tCK (min.), BL = 4 1, 2, 5
Refresh current
ICC5
-7A/7AL 2240
mA
tRC = tRC (min.)
3
ICC5
-75/75L 2000
mA
Self refresh current
ICC6
48
mA
VIH ≥ VDD – 0.2V
VIL ≤ 0.2V
7
Self refresh current
(L-version)
ICC6
-XXL 16
mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, /CLK operating current.
7. After self refresh mode set, self refresh current.
DC Characteristics 2 (TA = 0 to +70°C, VDD = 3.3V ± 0.3V, VSS = 0V)
Parameter
Input leakage current
Symbol
min.
ILI
–10
Output leakage current
ILO
–10
Output high voltage
Output low voltage
VOH
2.4
VOL
—
max.
10
10
—
0.4
Unit
Test condition
µA
0 ≤ VIN ≤ VDD
µA
0 ≤ VOUT ≤ VDD
DQ = disable
V
IOH = –4mA
V
IOL = 4mA
Notes
Data Sheet E0240E20 (Ver. 2.0)
8
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