HYS72V4120GU-10 데이터 시트보기 (PDF) - Siemens AG
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HYS72V4120GU-10 Datasheet PDF : 11 Pages
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HYS64(72)V4120GU-10
4M x 64/72 SDRAM-Module
AC Characteristics 3)4)
TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 1 ns
Parameter
Symbol
Limit Values
-10
min
max
Unit Note
Clock and Clock Enable
Clock Cycle Time
tCK
CAS Latency = 3
10
ns
CAS Latency = 2
15
ns
CAS Latency = 1
30
ns
System Frequency
fCK
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
–
100 MHz
–
66 MHz
–
33 MHz
Clock Access Time
tAC
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
–
8
ns 5
–
9
ns
–
27
ns
Clock High Pulse Width
tCH
3.5
Clock Low Pulse Width
tCL
3.5
CKE Setup Time
tCKS
3
CKE Hold Time
tCKH
1
CKE Setup Time (Power down mode) tCKSP
3
CKE Setup Time (Self Refresh Exit) tCKSR
8
Transition time (rise and fall)
tT
1
–
ns
–
ns
–
ns 6
–
ns 6
–
ns 6
–
ns 8
30
ns
Common Parameters
Command Setup time
Command Hold Time
Address Setup Time
Address Hold Time
RAS to CAS delay
Cycle Time
Active Command Period
Precharge Time
Bank to Bank Delay Time
tCS
3
–
ns 6
tCH
1
–
ns 6
tAS
3
–
ns 6
tAH
1
–
ns 6
tRCD
30
–
ns
tRC
75
120k
ns
tRAS
45
120k
ns
tRP
30
–
ns
tRRD
20
–
ns
Semiconductor Group
7
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