H20R120 데이터 시트보기 (PDF) - Infineon Technologies

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H20R120

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

Soft Switching Series

IHW20N120R

240V

960V

10V

5V

0V

0nC

50nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=20 A)

100nC

Ciss

1nF

100pF

Coss

Crss

10pF

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

D=0.5

10-1K/W

0.2

R,(K/W) τ, (s)

0.1

0.1159

0.1048

7.03*10-2

9.49*10-3

0.05 0.0864

8.06*10-4

0.02

0.0162

0.0275

9.62*10-5

1.1*10-5

0.01

R1

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-2K/W

1µs 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 19. IGBT transient thermal

resistance

(D = tp / T)

D=0.5

0.2

0.1

10-1K/W

0.05

0.02

0.01

single pulse

R,(K/W)

0.1649

0.1068

0.0751

0.0277

0.1305

R1

τ, (s)

1.45*10-1

1.29*10-2

9.81*10-4

1.04*10-4

9.6*10-6

R2

C1=τ1/R1 C2=τ2/R2

10-2K/W

1µs 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 20. Typical Diode transient thermal

impedance as a function of pulse width

(D=tP/T)

Power Semiconductors

8

Rev. 2.4 May 06

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