H20R120 데이터 시트보기 (PDF) - Infineon Technologies

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H20R120

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

Soft Switching Series

IHW20N120R

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

Symbol

RthJC

RthJCD

RthJA

Conditions

Max. Value

Unit

0.42

K/W

0.66

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Integrated gate resistor

Symbol

Conditions

V(BR)CES

VCE(sat)

VF

VGE(th)

ICES

VGE=0V, IC=500µA

VGE = 15V, IC=20A

Tj=25°C

Tj=125°C

Tj=175°C

VGE=0V, IF=10A

Tj=25°C

Tj=125°C

Tj=175°C

IC=0.7mA,

VCE=VGE

VCE=1200V,

VGE=0V

Tj=25°C

Tj=175°C

IGES

gfs

RGint

VCE=0V,VGE=20V

VCE=20V, IC=20A

min.

1200

-

-

-

-

-

-

5.1

-

-

-

-

Value

Typ.

-

1.55

1.75

1.85

1.2

1.2

1.2

5.8

-

-

-

11.5

none

Unit

max.

-V

1.75

-

-

1.4

-

-

6.4

µA

5

2500

100 nA

-S

Ω

Power Semiconductors

2

Rev. 2.4 May 06

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