H20R120 데이터 시트보기 (PDF) - Infineon Technologies

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H20R120

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

Soft Switching Series

IHW20N120R

Dynamic Characteristic

Input capacitance

Ciss

VCE=25V,

-

Output capacitance

Coss

VGE=0V,

-

Reverse transfer capacitance

Crss

f=1MHz

-

Gate charge

QGate

VCC=960V, IC=20A

-

VGE=15V

Internal emitter inductance

LE

-

measured 5mm (0.197 in.) from case

1307

76

14

113

13

- pF

-

-

- nC

- nH

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=600V,IC=20A

VGE=0 /15V,

RG=47Ω,

Lσ2)=180nH,

Cσ2)=39pF

min.

-

-

-

-

-

-

-

Value

typ.

Unit

max.

57

- ns

25

-

579

-

68

-

-

- mJ

1.7

-

1.7

-

Switching Characteristic, Inductive Load, at Tj=175 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=175°C

VCC=600V,IC=20A,

VGE= 0 /15V,

RG= 47Ω,

Lσ=180nH2),

Cσ=39pF2)

min.

-

-

-

-

-

-

-

Value

Typ.

55

37

701

132

-

2.8

2.8

Unit

max.

- ns

-

-

-

- mJ

-

-

2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors

3

Rev. 2.4 May 06

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