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IDT72V845

3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18 and DUAL 4,096 x 18

Integrated Device Technology 

IDT72V805/72V815/72V825/72V835/72V845

3.3 V CMOS DUAL SyncFIFO™ 256 x 18, 512 x 18, 1,024 x 18, 4,096 x 18

COMMERCIAL AND INDUSTRIAL

TEMPERATURE RANGES

ABSOLUTE MAXIMUM RATINGS

RECOMMENDED OPERATING DC

Symbol

VTERM

TSTG

IOUT

Rating

Terminal Voltage

with respect to GND

Storage

Temperature

DC Output Current

Commercial

–0.5 to +5

–55 to +125

–50 to +50

CONDITIONS

Unit

V

Symbol

Parameter

VCC Supply Voltage

Commercial/Industrial

°C

GND Supply Voltage

mA

VIH

Input High Voltage

Commercial/Industrial

Min. Typ. Max. Unit

3.0

3.3

3.6 V

0

0

0V

2.0

—

5.0 V

VIL(1) Input Low Voltage

NOTE:

Commercial/Industrial

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation TA

Operating Temperature

of the device at these or any other conditions above those indicated in the operational

Commercial

sections of this specification is not implied. Exposure to absolute maximum rating TA

conditions for extended periods may affect reliability.

Operating Temperature

Industrial

—

—

0.8 V

0

—

70 °C

-40



85 °C

NOTE:

1. 1.5V undershoots are allowed for 10ns once per cycle.

DC ELECTRICAL CHARACTERISTICS

(Commercial: VCC = 3.3V ± 0.3V, TA = 0°C to +70°C; Industrial: VCC = 3.3V ± 0.3V, TA = -40°C to +85°C)

Symbol

ILI(2)

ILO(3)

VOH

VOL

Parameter

Input Leakage Current (any input)

Output Leakage Current

Output Logic “1” Voltage, IOH = –2 mA

Output Logic “0” Voltage, IOL = 8 mA

IDT72V805

IDT72V815

IDT72V825

IDT72V835

IDT72V845

Commercial & Industrial(1)

tCLK = 10, 15, 20 ns

Min.

Typ.

Max.

Unit

–1

—

1

µA

–10

—

10

µA

2.4

—

—

V

—

—

0.4

V

ICC1(4,5,6)

Active Power Supply Current

—

—

60

mA

ICC2(4,7)

Standby Current

—

—

10

mA

NOTES:

1. Industrial temperature range product for the 15ns speed grade is available as a standard device.

2. Measurements with 0.4 ≤ VIN ≤ VCC.

3. OE ≥ VIH, 0.4 ≤ VOUT ≤ VCC.

4. Tested with outputs disabled (IOUT = 0).

5. RCLK and WCLK toggle at 20 MHZ and data inputs switch at 10 MHz.

6. Typical ICC1 = 2[2.04 + 0.88*fS + 0.02*CL*fS] (in mA).

These equations are valid under the following conditions:

VCC = 3.3V, TA = 25°C, fS = WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching at fS/2, CL = capacitive load (in pF).

7. All Inputs = VCC –0.2V or GND + 0.2V, except RCLK and WCLK, which toggle at 20 MHz.

CAPACITANCE

(TA = +25°C, f = 1.0MHz)

Symbol Parameter(1)

Conditions

CIN(2)

COUT(1,2)

Input

Capacitance

Output

Capacitance

VIN = 0V

VOUT = 0V

NOTES:

1. With output deselected, (OE ≥ VIH).

2. Characterized values, not currently tested.

Max.

Unit

10

pF

10

pF

4

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