ADG428 데이터 시트보기 (PDF) - Analog Devices
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ADG428 Datasheet PDF : 12 Pages
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SINGLE SUPPLY1 (VDD = +12 V, VSS = 0 V, GND = 0 V, WR = 0 V, RS = 2.4 V unless otherwise noted)
ADG428/ADG429
Parameter
ANALOG SWITCH
Analog Signal Range
RON
∆RON
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
ADG428
ADG429
Channel ON Leakage ID, IS (ON)
ADG428
ADG429
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tTRANSITION
B Version
–40؇C to
+25؇C +85؇C
0 to VDD
90
200
10
± 0.005
± 0.5 ± 50
± 0.015
±1
± 100
± 0.008
±1
± 50
± 0.02
±1
± 0.01
±1
± 100
± 50
2.4
0.8
±1
8
250
350 450
T Version
–55؇C to
+25؇C +125؇C
0 to VDD
90
200
10
± 0.005
± 0.5 ± 50
± 0.015
±1
± 0.008
±1
± 100
± 50
± 0.02
±1
± 0.01
±1
± 100
± 50
2.4
0.8
±1
8
250
350 450
tOPEN
25
10
tON (EN, WR)
tOFF (EN, RS)
200
300 400
80
300 400
tW, Write Pulsewidth
100
tS, Address, Enable Setup Time
100
tH, Address, Enable Hold Time
10
tRS, Reset Pulsewidth
100
Charge Injection
4
25
10
200
300 400
80
300 400
100
100
10
100
4
OFF Isolation
–75
–75
–60
–60
Channel-to-Channel Crosstalk
85
85
CS (OFF)
CD (OFF)
ADG428
ADG429
CD, CS (ON)
ADG428
ADG429
11
11
40
40
20
20
54
54
34
34
POWER REQUIREMENTS
IDD
20
20
100
100
NOTES
1Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
Units
V
Ω typ
Ω max
% max
nA typ
nA max
nA typ
nA max
nA typ
nA max
nA typ
nA max
nA max
nA max
V min
V max
µA max
pF typ
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
ns min
ns min
ns min
ns min
pC typ
dB typ
dB min
dB typ
pF typ
pF typ
pF typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
VD = +10 V, IS = –500 µA
0 V < VS < 10 V, IS = –1 mA
VD = 10 V/0 V, VS = 0 V/10 V;
Test Circuit 2
VD = 10 V/0 V, VS = 0 V/10 V;
Test Circuit 3
VS = VD = 10 V/0 V;
Test Circuit 4
VIN = 0 or VDD
f = 1 MHz
RL = 1 MΩ, CL = 35 pF;
VS1 = 10 V/0 V, VS8 = 0 V/10 V;
Test Circuit 5
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 6
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 7
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 7
VS = +5 V
VS = 6 V, RS = 0 Ω, CL = 10 nF;
Test Circuit 10
RL = 1 kΩ, CL = 15 pF, f = 100 kHz;
VS = 7 V rms, VEN = 0 V; Test Circuit 11
RL = 1 kΩ, CL = 15 pF, f = 100 kHz;
Test Circuit 12
f = 1 MHz
f = 1 MHz
f = 1 MHz
VIN = 0 V, VEN = 0 V
REV. C
–3–
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