ADG428 데이터 시트보기 (PDF) - Analog Devices
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ADG428 Datasheet PDF : 12 Pages
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ADG428/ADG429–SPECIFICATIONS
DUAL SUPPLY1 (VDD = +15 V, VSS = –15 V, GND = 0 V, WR = 0 V, RS = 2.4 V unless otherwise noted)
Parameter
B Version
–40؇C to
+25؇C +85؇C
T Version
–55؇C to
+25؇C +125؇C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
RON
∆RON
VSS to VDD
60
100 125
10
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
ADG428
ADG429
Channel ON Leakage ID, IS (ON)
ADG428
ADG429
± 0.03 ± 0.3
± 0.5 ± 50
± 0.07 ± 0.7
± 1 ± 100
± 0.05 ± 0.5
± 1 ± 50
± 1 ± 100
± 1 ± 50
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
2.4
0.8
± 0.1 ± 1
8
DYNAMIC CHARACTERISTICS2
tTRANSITION
110
250 300
VSS to VDD
60
100 125
10
± 0.03 ± 0.3
± 0.5 ± 50
± 0.07 ± 0.7
± 1 ± 100
± 0.05 ± 0.5
± 1 ± 50
± 1 ± 100
± 1 ± 50
2.4
0.8
± 0.1 ± 1
8
110
250 300
tOPEN
tON (EN, WR)
tOFF (EN, RS)
tW, Write Pulsewidth
tS, Address, Enable Setup Time
tH, Address, Enable Hold Time
tRS, Reset Pulsewidth
Charge Injection
10
115
150 225
105
150 300
100
100
10
100
4
10
115
150 225
105
150 300
100
100
10
100
4
OFF Isolation
–75
–75
–60
–60
Channel-to-Channel Crosstalk 85
85
CS (OFF)
CD (OFF)
ADG428
ADG429
CD, CS (ON)
ADG428
ADG429
11
11
40
40
20
20
54
54
34
34
POWER REQUIREMENTS
IDD
ISS
20
100
0.001
5
20
100
0.001
5
NOTES
1Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
V
Ω typ
Ω max
% max
nA typ
nA max
nA typ
nA max
nA typ
nA max
nA max
nA max
V min
V max
µA max
pF typ
ns typ
ns max
ns min
ns typ
ns max
ns typ
ns max
ns min
ns min
ns min
ns min
pC typ
dB typ
dB min
dB typ
pF typ
pF typ
pF typ
pF typ
pF typ
µA typ
µA max
µA typ
µA max
VD = ± 10 V, IS = –1 mA
–10 V < VS < 10 V, IS = –1 mA
VD = ± 10 V, VS = ϯ10 V;
Test Circuit 2
VD = ± 10 V, VS = ϯ10 V;
Test Circuit 3
VS = VD = ± 10 V;
Test Circuit 4
VIN = 0 or VDD
f = 1 MHz
RL = 1 MΩ, CL = 35 pF;
VS1 = ±10 V, VS8 = ϯ10 V;
Test Circuit 5
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 6
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 7
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 7
VS = +5 V
VS = 0 V, RS = 0 Ω, CL = 10 nF;
Test Circuit 10
RL = 1 kΩ, CL = 15 pF, f = 100 kHz;
VS = 7 V rms, VEN = 0 V; Test Circuit 11
RL = 1 kΩ, CL = 15 pF, f = 100 kHz;
Test Circuit 12
f = 1 MHz
f = 1 MHz
f = 1 MHz
VIN = 0 V, VEN = 0 V
–2–
REV. C
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