GA100TS60U 데이터 시트보기 (PDF) - International Rectifier

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GA100TS60U

"HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast™ Speed IGBT

International Rectifier 

20000

16000

12000

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

Cies

8000

4000

Coes

Cres

0

1

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

GA100TS60U

20 VCC = 400V

I C = 66A

16

12

8

4

0

0

100

200

300

400

500

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

18 VCC = 360V

VGE = 15V

TJ = 21525°°CC

16 IC = 100A

14

12

10

8

10

20

30

40

50

RGRG,1G,aGteatRe eRseisitsatnacnece(O(Ωhm) )

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

100 RGG1=1=5OΩh;mRG2 = 0 Ω

VGE = 15V

VCC = 360V

10

IC = 200 A

IC = 100 A

IC = 50 A

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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