GA100TS60U 데이터 시트보기 (PDF) - International Rectifier

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GA100TS60U

"HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast™ Speed IGBT

International Rectifier 

GA100TS60U

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — —

VGE = 0V, IC = 1mA

VCE(on)

Collector-to-Emitter Voltage

— 1.6 2.1

VGE = 15V, IC = 100A

— 1.6 — V VGE = 15V, IC = 100A, TJ = 125°C

VGE(th)

Gate Threshold Voltage

3.0 — 6.0

IC = 500µA

∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 500µA

gfe

Forward Transconductance „

— 107 — S VCE = 25V, IC = 100A

ICES

Collector-to-Emitter Leaking Current

— — 1.0 mA VGE = 0V, VCE = 600V

— — 10

VGE = 0V, VCE = 600V, TJ = 125°C

VFM

Diode Forward Voltage - Maximum

— 3.6 — V IF = 100A, VGE = 0V

— 3.5 —

IF = 100A, VGE = 0V, TJ = 125°C

IGES

Gate-to-Emitter Leakage Current

— — 100 nA VGE = ±20V

Dynamic Characteristics - TJ = 125°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff (1)

Ets (1)

Cies

Coes

Cres

trr

Irr

Qrr

di(rec)M/dt

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Energy

Turn-Off Switching Energy

Total Switching Energy

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Diode Reverse Recovery Time

Diode Peak ReverseCurrent

Diode Recovery Charge

Diode Peak Rate of Fall of Recovery

During tb

Min. Typ. Max. Units

Conditions

— 443 664

VCC = 400V

— 86 129

— 150 225

— 168 —

— 145 —

nC IC = 66A

TJ = 25°C

RG1 = 27Ω, RG2 = 0Ω

ns IC = 100A

— 320 —

— 242 —

VCC = 360V

VGE = ±15V

— 4.0 — mJ

— 7.0 —

— 11 17

— 9837 —

VGE = 0V

— 615 —

— 128 —

pF VCC = 30V

ƒ = 1 MHz

— 143 —

— 95 —

— 6813 —

— 1883 —

ns

A

nC

A/µs

IC = 100A

RG1 = 27Ω

RG2 = 0Ω

VCC = 360V

di/dt»1300A/µs

2

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