DG509B 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG509B Datasheet PDF : 18 Pages
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DG508B, DG509B
Vishay Siliconix
SPECIFICATIONS
Parameter
Dynamic Characteristics
Transition Time
Break-Before-Make Interval
Enable Turn-On Time
Enable Turn-Off Time
Charge Injectione
Off Isolatione
Crosstalke
- 3 dB Bandwidthe
Total Harmonic Distortione
Source Off Capacitancee
Drain Off Capacitancee
Drain On Capacitancee
Power Supply
Positive Supply Current
Negative Supply Current
Symbol
Test Conditions
- 40 °C to 125 °C - 40 °C to 85 °C
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V (± 10 %)
VAX, VEN = 2.0 V, 0.8 Va
Temp.b Typ.c Min.d Max.d Min.d Max.d Unit
VS1 = + 10 V/- 10 V,
Room 145
300
300
tTRANS
VS8 = - 10 V/+ 10 V,
RL = 1 M, CL = 35 pF
Full
400
400
tOPEN
VS1 = VS8 = 5.0 V, CL = 35 pF, Room 37
RL = 1 k
Full
15
1
15
1
ns
Room 100
250
250
tON(EN)
VS1 = 5 V, VS2 to VS8 = 0 V,
Full
340
340
RL = 1 k, CL = 35 pF
Room 90
240
240
tOFF(EN)
Full
300
300
QINJ CL = 1 nF, RGEN = 0 , VGEN = 0 V Full
2
pC
OIRR
Room - 81
XTALK
CL = 5 pF, RL = 50 f = 1 MHz Room - 88
dB
BW
THD
RL = 50
RL = 10 k, 5 Vrms
f = 20 Hz to 20 kHz
Room 250
Room 0.04
MHz
%
CS(off)
Room 3
DG508B Room 13
CD(off)
f = 1 MHz
DG509B Room 8
pF
CD(on)
DG508B Room 18
DG509B Room 11
Room 0.01
0.5
I+
VAX, VEN = 0 V or V+
Full
0.6
0.5
mA
0.6
I-
Full
- 200
- 200
µA
SPECIFICATIONS (Single Supply 12 V)
Parameter
Analog Switch
Analog Signal Rangee
On-Resistance
RDS(on) Matching
Switch Off Leakage Current
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V (± 10 %)
VAX, VEN = 2.0 V, 0.8 Va
- 40 °C to 125 °C - 40 °C to 85 °C
Temp.b Typ.c Min.d Max.d Min.d Max.d Unit
VANALOG
Full
0
12
0
12
V
Room 265
500
RDS(on)
VD = 10 V/0 V, IS = 1 mA
Full
650
500
600
RDS(on)
Room 10
IS(off)
Room
Full
-1
1
-1
1
- 50 - 50 - 50
50
ID(off)
ID(off)
V+ = 12 V, V- = 0 V
VD = 0 V/10 V,
VS = 10 V/0 V
Room
DG508B
Full
Room
DG509B
Full
-1
1
-1
1
nA
- 100 100 - 100 100
-1
1
-1
1
- 50
50
- 50
50
www.vishay.com
4
Document Number: 64821
S10-2817-Rev. D, 20-Dec-10
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