CXB1810FN 데이터 시트보기 (PDF) - Sony Semiconductor
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CXB1810FN Datasheet PDF : 17 Pages
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CXB1810FN
Electrical Characteristics
DC Characteristics
(VCC = 3.14 to 5.25V, Ta = –40 to +85°C, unless otherwise specified)
Item
Symbol
Conditions
Q/QB high output voltage
Q/QB low output voltage
VOH1 51Ω terminated to VCC – 2V
VOL1 51Ω terminated to VCC – 2V
Q/QB output amplitude
Vp
51Ω terminated to VCC – 2V
SDC/SDCB high output voltage VOHT IOH = –0.2mA
SDC/SDCB low output voltage VOLT IOL = 2.1mA
Min. Typ. Max. Unit
VCC – 1100
VCC – 1800
VCC – 650 mV
VCC – 1300 mV
500
1000 mVp-p
2.4
V
0.5
V
SW high input voltage
SW low input voltage
VIHT
VILT
VCC – 0.3
VEE
VCC
V
VEE + 0.3 V
Maximum input voltage
amplitude
D/DB input resistance
Supply current
Vmax During single-phase input
Rin
ICC All outputs open
1000
33
50
40
mVp-p
69
Ω
55
mA
AC Characteristics
(VCC = 3.14 to 5.25V, Ta = –40 to +85°C, unless otherwise specified)
Item
Symbol
Conditions
Min. Typ. Max. Unit
Limiting amplifier gain
GL
45
dB
Signal detection threshold voltage
Vth During single ended input
34
mVp-p
Signal detection hysteresis width
Signal detection response assert time∗1
Signal detection response deassert time∗1
∆P
Tas
Tdas
3 6 8 dB
0
100 µs
2.3
100 µs
Q/QB rise time (20 to 80%)
Q/QB fall time (20 to 80%)
TR 51Ω terminated to VCC – 2V
130
ps
TF 51Ω terminated to VCC – 2V
110
ps
∗1 Data = PN23 – 1 pattern, 100mVp-p single ended, Rd = open, CAP2/CAP3 = 470pF
–5–
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