CXB1562AQ 데이터 시트보기 (PDF) - Sony Semiconductor
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CXB1562AQ Datasheet PDF : 16 Pages
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CXB1562AQ
Electrical Characteristics
• DC characteristics
(VCC = GND, VEE = –5V±10%, Ta = –40 to +85°C, VCC = VCCD, VCCDA, VCCA VEE = VEED, VEEA)
Item
Symbol
Conditions
Min.
Typ.
Max. Unit
Power supply
IEE
RT1 = 50Ω, VT1 = –2V
termination
–50
–37
–28 mA
Q/Q SD/SD High output voltage
Q/Q SD/SD Low output voltage
VOH
RT1 = 50Ω, VT1 = –2V –1025
termination
VOL
Ta = 0 to 85°C
–1810
–880
–1620
SD/SD High output voltage 2
SD/SD Low output voltage 2
VOHb
VOLb
RT2 = 510Ω,
VEE termination
Ta = 0 to 85°C
–1075
–1860
–830
mV
–1570
SW High input voltage
VIH
–1900
0
SW Low input voltage
VIL
VEE
–2500
SW High input current
IIH
SW Low input current
IIL
2
µA
–60
D/D input resistance
Rin
1125 1500 1875
Internal resistance 1 for alarm level
setting
Internal resistance 2 for alarm level
setting
Ra1
Refer to Fig. 3.
Ra2A, B Refer to Fig. 3.
745
993 1241
Ω
82.7 110.3 137.9
Resistance between VccA and VccP RP
Resistance between VccA and VccR RR
10
37.5
50
62.5 kΩ
Pare ratio of internal resistance 2 for
alarm level setting
δRa2
Ra2A/Ra2B
0.97
1.03
Resistance between CAP1 and R1K R3
Resistance between CAP1 and R2K R4
745
1489
993
1986
1241 Ω
2482
–6–
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