EN29F002(2000) 데이터 시트보기 (PDF) - Eon Silicon Solution Inc.

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EN29F002
(Rev.:2000)

2 Megabit (256K x 8-bit) Flash Memory

Eon Silicon Solution Inc. 

EN29F002 / EN29F002N

Low VCC Write Inhibit

During VCC power-up or power-down, the EN20F002 locks out write cycles to protect against any

unintentional writes. If VCC < VLOK, the command register is disabled and all internal program or

erase circuits are disabled. Under this condition, the device will reset to the READ mode. Subsequent

writes will be ignored until VCC > VLKO.

Write “Noise” Pulse Protection

Noise pulses less than 5ns on OE , CE or WE will neither initiate a write cycle nor change the

command register.

Logical Inhibit

If OE = VIL or CE =VIH, or WE=VIH, writing is inhibited. To initiate a write cycle, CE and W E must be

a logical “zero” and OE must be a logical “one”.

Block Protection/Unprotection

When the device is shipped, all blocks are unprotected. Each block can be separately protected

against data changes. Using hardware protection circuitry enabled at user’s site with external

programming equipment, both program and erase operations may be disabled for any specified

block or combination of blocks.

Verification of write protection for a specific block can be achieved with an Auto Select ID read

command at location 02h where the address bits A17 - A13 select the defined block (see Table 5). A

logical “1” at DQ0 means a protected block and a logical “0” means an unprotected block.

The Block Unprotect disables block protection in all blocks in one operation to implement code

changes. A sector must be placed in protection mode using the protection algorithm mentioned

above before unprotection can be executed.

Additional details on this feature are provided in a supplement, which can be obtained by contacting a

representative of Eon Silicon Devices, Inc.

4800 Great America Parkway, Suite 202

13

Santa Clara, CA 95054

Tel: 408-235-8680

Fax: 408-235-8685

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