BS107 데이터 시트보기 (PDF) - Vishay Semiconductors
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BS107 Datasheet PDF : 4 Pages
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VN2010L/BS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
VDS = 5 V
TJ = 150_C
1
Capacitance
60
VGS = 0 V
50
f = 1 MHz
40
C iss
25_C
0.1
30
C oss
20
–55_C
0.01
0
0.4
0.8
1.2
1.6
2.0
VGS – Gate-to-Source Voltage (V)
Gate Charge
15.0
12.5
I D = 0.1 A
10
C rss
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Load Condition Effects on Switching
100
VDD = 25 V
RG = 25 W
50
VGS = 0 to 10 V
10.0
VDS = 100 V
20
7.5
160 V
10
5.0
5
2.5
2
0
0
250
500
750
1000
1250
Qg – Total Gate Charge (pC)
1
0.01
0.1
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
td(off)
tr
td(on)
tf
1.0
0.2
0.1
0.1 0.05
0.02
0.01
0.1
0.01
Single Pulse
1
www.vishay.com
11-4
10
100
t1 – Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
1K
10 K
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
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