BS107 데이터 시트보기 (PDF) - Vishay Semiconductors
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BS107 Datasheet PDF : 4 Pages
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VN2010L/BS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
0.5
VGS = 10 V
5V
0.4
4V
6V
0.3
3V
0.2
0.1
2V
0
0
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
500
VDS = 15 V TJ = –55_C
25_C
400
125_C
300
Output Characteristics for Low Gate Drive
50
VGS = 2.2 V
40
2.0 V
30
1.8 V
20
1.6 V
1.4 V
10
1.2 V
0.6 V
1.0 V
0
0
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
28
24
20
I D = 500 mA
16
12
250 mA
200
8
100
4
50 mA
0
0
1
2
3
4
5
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
12.5
0
0
2.25
4
8
12
16
20
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
10.0
7.5
VGS = 10 V
2.00
VGS = 4.5 V
1.75
1.50
ID = 50 mA
10 mA
1.25
5.0
1.00
2.5
0.75
0
0
0.2
0.4
0.6
0.8
1.0
ID – Drain Current (A)
0.50
–50 –10
30
70
110
150
TJ – Junction Temperature (_C)
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-3
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