BS107 데이터 시트보기 (PDF) - Vishay Semiconductors
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BS107 Datasheet PDF : 4 Pages
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VN2010L/BS107
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VN2010L
BS107
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Drain Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-Resistanceb
Forward Transconductanceb
Common Source
Output Conductanceb
V(BR)DSS
VGS(th)
IGSS
IDSV
IDSS
ID(on)
rDS(on)
gfs
gos
VGS = 0 V, ID = 100 mA
VDS = VGS, ID = 1 mA
220 200
200
V
1.2
0.8
1.8
0.8
3
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "15 V
"10
nA
"10
VDS = 70 V, VGS = 0.2 V
1
VDS = 130 V, VGS = 0 V
VDS = 160 V, VGS = 0 V
0.03
mA
1
TJ = 125_C
100
VDS = 10 V, VGS = 10 V
0.7
0.1
A
VGS = 2.8 V, ID = 0.02 A
6
28
VGS = 4.5 V, ID = 0.05 A
6
10
W
TJ = 125_C
11
20
VDS = 15 V, ID = 0.1 A
180 125
mS
VDS = 15 V, ID = 0.05 A
0.15
Dynamic
Input Capacitance
Ciss
35
60
Output Capacitance
Coss
VDS =25 V, VGS = 0 V, f = 1 MHz
9
30
pF
Reverse Transfer Capacitance
Crss
1
15
Switchingc
Turn-On Time
Turn-Off Time
tON
VDD = 25 V, RL = 250 W
5
20
ID ^ 0.1 A, VGEN = 10 V
tOFF
RG = 25 W
21
30
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
ns
VNDQ20
www.vishay.com
11-2
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
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