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SL1ICS3101 데이터 시트보기 (PDF) - Philips Electronics

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SL1ICS3101
Philips
Philips Electronics Philips
SL1ICS3101 Datasheet PDF : 20 Pages
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Philips Semiconductors
I-CODE1 Label IC (97 pF)
Product specification
SL1ICS3101
8 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); notes 1 and 2.
SYMBOL
Tstg
Tj
Vesd
Ii(LA-LB)(p)
PARAMETER
storage temperature
junction temperature
electrostatic discharge voltage
input current (peak value)
CONDITIONS
note 3
note 4
MIN.
55
55
2
80
TYP.
MAX.
+140
+140
+2
+80
UNIT
°C
°C
kV
mA
Notes
1. Stresses above those listed in this table may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any conditions other than those described in Chapter 11 is not implied.
2. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects
of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying
greater than the rated maxima.
3. Human Body Model (HBM) in accordance with “MIL-STD-883D Method 3015.7”.
4. At 13.56 MHz including current via resonant capacitor.
9 QUALITY ASSURANCE
9.1 Electrical acceptance test
The electrical acceptance test is performed in line
(‘sampling on the fly’) according to the test specifications.
Sampling plan:
According to document “General quality specification”.
9.2 Visual inspection
9.2.1 AFTER WAFER FINAL TEST
Performed according to document “SNW-FQ-627”.
Sampling plan:
According to document “General quality specification”.
10 HANDLING INSTRUCTIONS
Please refer to Philips “General specification for 6” wafer”
for the following items:
Sawing
Die attach
Wire bonding.
9.2.2 AFTER SAWING (FILM FRAME CARRIER)
Performed according to document “PICTOH-QS007”.
Sampling plan (3 wafers per lot):
Accept 0 to 3.
2002 May 23
8

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