MPVZ5004 데이터 시트보기 (PDF) - Freescale Semiconductor

부품명

상세내역

일치하는 목록

MPVZ5004

Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

Freescale Semiconductor 

Pressure

Maximum Ratings

Table 2. Maximum Ratings(1)

Rating

Symbol

Value

Unit

Maximum Pressure (P1 > P2)

Storage Temperature

PMAX

16

kPa

TSTG

–30 to +100

°C

Operating Temperature

TA

0 to +85

°C

1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.

Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip.

VS

2

Sensing

Element

Thin Film

Temperature

Compensation

and Calibration

Circuitry

Gain Stage #2

and

Ground

Reference

Shift Circuitry

4

VOUT

3

GND

Pins 1, 5, 6, 7, and 8 are NO CONNECTS

for small outline package device.

Figure 1. Integrated Pressure Sensor Schematic

On-chip Temperature Compensation and Calibration

The performance over temperature is achieved by

integrating the shear-stress strain gauge, temperature

compensation, calibration and signal conditioning circuitry

onto a single monolithic chip.

Figure 2 illustrates the gauge configuration in the basic

chip carrier (Case 482). A fluorosilicone gel isolates the die

surface and wire bonds from the environment, while allowing

the pressure signal to be transmitted to the silicon diaphragm.

The MPxx5004G series sensor operating characteristics

are based on use of dry air as pressure media. Media, other

than dry air, may have adverse effects on sensor

performance and long-term reliability. Internal reliability and

qualification test for dry air, and other media, are available

from the factory. Contact the factory for information regarding

media tolerance in your application.

Figure 3 shows the recommended decoupling circuit for

interfacing the output of the MPxx5004G to the A/D input of

the microprocessor or microcontroller. Proper decoupling of

the power supply is recommended.

Typical, minimum and maximum output curves are shown

for operation over a temperature range of 10°C to 60°C using

the decoupling circuit shown in Figure 3. The output will

saturate outside of the specified pressure range.

Fluorosilicone

Gel Die Coat

Stainless

Die

Steel Cap

Wire Bond

P1

Thermoplastic

Case

Lead Frame

MPXV5004G

4

P2

Differential Sensing Element

Die Bond

Figure 2. Cross-Sectional Diagram (Not to Scale)

Sensors

Freescale Semiconductor

Share Link: