MMG3009NT1(2006) 데이터 시트보기 (PDF) - Freescale Semiconductor

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MMG3009NT1
(Rev.:2006)

Heterojunction Bipolar Transistor (InGaP HBT)

Freescale Semiconductor 

Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Small - Signal Gain (S21)

Input Return Loss (S11)

Gp

14.3

15

—

IRL

—

- 13

—

Output Return Loss (S22)

ORL

—

- 17

—

Power Output @ 1dB Compression

P1dB

—

18

—

Third Order Output Intercept Point

IP3

—

34

—

Noise Figure

NF

—

4.2

—

Supply Current (1)

ICC

58

70

82

Supply Voltage (1)

VCC

—

5

—

1. For reliable operation, the junction temperature should not exceed 150°C.

Unit

dB

dB

dB

dBm

dBm

dB

mA

V

MMG3009NT1

6-2

Freescale Semiconductor

RF Product Device Data

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