BT152-500RT 데이터 시트보기 (PDF) - NXP Semiconductors.

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BT152-500RT

SCR

NXP Semiconductors. 

NXP Semiconductors

BT152-500RT

SCR

6. Characteristics

Table 6. Characteristics

Symbol

Parameter

Static characteristics

IGT

gate trigger current

IL

latching current

IH

holding current

VT

on-state voltage

VGT

gate trigger voltage

ID

off-state current

IR

reverse current

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

tgt

gate-controlled turn-on time

tq

commutated turn-off time

Conditions

VD = 12 V; IT = 100 mA; Tj = 25 °C; see

Figure 7

VD = 12 V; IG = 100 mA; Tj = 25 °C;

see Figure 8

Tj = 25 °C; see Figure 9

IT = 40 A; Tj = 25 °C; see Figure 10

VD = 12 V; IT = 100 mA; Tj = 25 °C; see

Figure 11

VD = 500 V; IT = 100 mA; Tj = 125 °C;

see Figure 11

VD = 500 V; Tj = 125 °C

Tj = 125 °C; VR 500 V

VDM = 335 V; Tj = 125 °C; exponential

waveform; gate open circuit;

see Figure 12

ITM = 40 A; VD = 500 V; IG = 100 mA;

dIG/dt = 5 A/µs

VDM = 335 V; Tj = 125 °C; ITM = 20 A;

VR = 25 V; (dIT/dt)M = 30 A/µs;

dVD/dt = 50 V/µs; RGK = 100 Ω

Min Typ Max Unit

-

3

32 mA

-

25

80

mA

-

15

60

mA

-

1.4 1.75 V

-

0.6 1.5 V

0.25 0.4 -

V

-

0.2 1

mA

-

0.2 1

mA

200 300 -

V/µs

-

2

-

µs

-

70

-

µs

3

IGT

IGT(25°C)

2

003aab824

3

IL

IL(25°C)

2

003aab825

1

1

0

−50

0

50

100

150

Tj (°C)

0

−50

0

50

100

150

Tj (°C)

Fig 7. Normalized gate trigger current as a function of Fig 8. Normalized latching current as a function of

junction temperature

junction temperature

BT152-500RT

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 9 June 2011

© NXP B.V. 2011. All rights reserved.

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