BT152-500RT 데이터 시트보기 (PDF) - NXP Semiconductors.

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BT152-500RT

SCR

NXP Semiconductors. 

BT152-500RT

SCR

Rev. 2 — 9 June 2011

Product data sheet

1. Product profile

1.1 General description

Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package

intended for use in applications requiring very high inrush current capability, high junction

temperature capability and high thermal cycling performance.

1.2 Features and benefits

 High junction temperature capability

 High thermal cycling performance

 Planar passivated for voltage

ruggedness and reliability

 Very high current surge capability

1.3 Applications

 Ignition circuits

 Motor control

 Protection circuits e.g. SMPS inrush

current

 Voltage regulation

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

VDRM

repetitive peak off-state

voltage

VRRM

repetitive peak reverse

voltage

ITSM

non-repetitive peak

half sine wave; Tj(init) = 25 °C;

on-state current

tp = 8.3 ms

half sine wave; Tj(init) = 25 °C;

tp = 10 ms; see Figure 4;

see Figure 5

IT(AV)

average on-state

current

half sine wave; Tmb ≤ 122 °C;

see Figure 3

IT(RMS)

RMS on-state current half sine wave; see Figure 1;

see Figure 2

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 100 mA;

Tj = 25 °C; see Figure 7

Min Typ Max Unit

-

-

500 V

-

-

500 V

-

-

220 A

-

-

200 A

-

-

13 A

-

-

20 A

-

3 32 mA

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