BT152-500RT 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT152-500RT Datasheet PDF : 12 Pages
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NXP Semiconductors
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
K
cathode
A
anode
G
gate
A
mounting base; connected to anode
Simplified outline
mb
BT152-500RT
SCR
Graphic symbol
A
K
G
sym037
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
BT152-500RT
TO-220AB
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
VRRM
IT(AV)
IT(RMS)
ITSM
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
half sine wave; Tmb ≤ 122 °C; see Figure 3
half sine wave; see Figure 1; see Figure 2
non-repetitive peak on-state
current
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
half sine wave; Tj(init) = 25 °C; tp = 10 ms;
see Figure 4; see Figure 5
I2t
dIT/dt
IGM
VRGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
tp = 10 ms; sine-wave pulse
IT = 50 A; IG = 200 mA; dIG/dt = 200 mA/µs
over any 20 ms period
Min Max Unit
-
500 V
-
500 V
-
13 A
-
20 A
-
220 A
-
200 A
-
200 A2s
-
200 A/µs
-
5
A
-
5
V
-
20 W
-
1
W
-40 150 °C
-
150 °C
BT152-500RT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 June 2011
© NXP B.V. 2011. All rights reserved.
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