BLF346 데이터 시트보기 (PDF) - Philips Electronics
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BLF346 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF power MOS transistor
Product specification
BLF346
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
IDSS
IGSS
VGSth
∆VGS
gfs
RDSon
IDSX
Cis
Cos
Crs
drain-source breakdown voltage VGS = 0; ID = 50 mA
65
drain-source leakage current VGS = 0; VDS = 28 V
−
gate-source leakage current
VGS = ±20 V; VDS = 0
−
gate-source threshold voltage VDS = 10 V; ID = 50 mA
2
gate-source voltage difference VDS = 10 V; ID = 50 mA
−
of matched pairs
forward transconductance
VDS = 10 V; ID = 5 A
3
drain-source on-state resistance VGS = 10 V; ID = 5 A
−
on-state drain current
VGS = 10 V; VDS = 10 V
−
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz −
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz −
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz −
−
−
V
−
2.5 mA
−
1
µA
−
4.5 V
−
100 mV
4.2 −
S
0.2 0.3 Ω
22
−
A
225 −
pF
180 −
pF
25
−
pF
2
handbook, halfpage
T.C.
(mV/K)
0
MGG105
handbook,4h0alfpage
ID
(A)
30
MGG106
−2
20
−4
10
−6
10−2
10−1
1
ID (A) 10
0
0
5
10
15
20
VGS (V)
VDS = 10 V.
Fig.4 Temperature coefficient of gate-source voltage
as a function of drain current; typical values.
VDS = 10 V; Tj = 25 °C.
Fig.5 Drain current as a function of gate-source
voltage; typical values.
1996 Oct 02
4
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