BLF346 데이터 시트보기 (PDF) - Philips Electronics
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BLF346 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF power MOS transistor
Product specification
BLF346
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Linear amplifier applications in Television transmitters
and transposers.
PINNING-SOT119
PIN
SYMBOL
1
s
2
s
3
g
4
d
5
s
6
s
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 6-lead, SOT119 flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the General Section of Data
Handbook SC19a for further information.
handbook, halfpage
1
3
CAUTION
5
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
DESCRIPTION
source
source
gate
drain
source
source
2
d
4
g
s
6
MAM268
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a linear amplifier.
MODE OF
f
VDS
ID
Th
PL
GP
dim
OPERATION
(MHz)
(V)
(A)
(°C)
(W)
(dB)
(dB) (1)
70
>24
>14
−52
Class-A
224.25
28
3
25
typ. 30
typ. 16.5
−52
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak synchronization level.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 02
2
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