Philips Semiconductors
VHF power MOS transistor
Product specification
BLF346
handbook, h4alfpage
Zi
(Ω)
ri
2
0
−2
xi
−4
−6
160
180
200
MGG110
220
240
f (MHz)
handbook, h2alfpage
ZL
(Ω)
1
MGG111
RL
XL
0
160
180
200
220
240
f (MHz)
Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 °C.
Fig.12 Input impedance as a function of frequency
(series components); typical values.
Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 °C.
Fig.13 Load impedance as a function of frequency
(series components); typical values.
handbook, halfpage
Zi
ZL MBA379
Fig.14 Definition of MOS impedance.
1996 Oct 02
handbook,2h0alfpage
Gp
(dB)
16
MGG112
12
8
4
0
160
180
200
220
240
f (MHz)
Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 °C.
Fig.15 Power gain as a function of frequency;
typical values.
10